- Aluminium gallium indium phosphide
Aluminium gallium indium phosphide (AluminumGalliumIndiumPhosphorus, also AlInGaP, InGaAlP, etc.) is a
semiconductor material .AlGaInP is used in manufacture of
light-emitting diode s of high-brightness red, orange, green, and yellow color, to form theheterostructure emitting light. It is also used to makediode laser s.AlGaInP layer is often grown by
heteroepitaxy ongallium arsenide orgallium phosphide in order to form aquantum well structure.afety and toxicity aspects
The toxicology of AlInGaP has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium gallium phosphide sources (such as
trimethylgallium ,trimethylindium andphosphine ) and industrial hygiene monitoring studies of standardMOVPE sources have been reported recently in a review [Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors; D V Shenai-Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1-4, pp. 816-821 (2004); doi|doi:10.1016/j.jcrysgro.2004.09.007] .ee also
*
Indium phosphide
*Gallium indium phosphide
*Aluminium gallium phosphide
*Indium gallium arsenide phosphide References
2. Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy, I J Griffin, D Wolverson, J J Davies, M Emam-Ismail, J Heffernan, A H Kean, S W Bland and G Duggan, Semicond. Sci. Technol. vol. 15 pp. 1030-1034 (2000) doi|10.1088/0268-1242/15/11/303
3. "High Brightness Light Emitting Diodes":G. B. Stringfellow and M. George Craford, Semiconductors and Semimetals, vol. 48, pp. 97-226.
External links
Wikimedia Foundation. 2010.